DF23MR12W1M1B11BOMA1

DF23MR12W1M1B11BOMA1
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Part Number DF23MR12W1M1B11BOMA1
Manufacturer Infineon Technologies
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Arrays
Description MOSFET MODULE 1200V 25A
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models DF23MR12W1M1B11BOMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 07 - Nov 11 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

DF23MR12W1M1B11BOMA1 Specifications

Part Number:DF23MR12W1M1B11BOMA1
Brand:Infineon Technologies
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Arrays
Manufacturer:Infineon Technologies
Product Status:Obsolete
FET Type:2 N-Channel (Dual)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:25A
Rds On (Max) @ Id, Vgs:45mOhm @ 25A, 15V
Vgs(th) (Max) @ Id:5.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs:620nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds:2000pF @ 800V
Power - Max:20mW
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:AG-EASY1BM-2

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In Stock 54690 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
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Pricing (USD)

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