For Reference Only
| Part Number | DF200R12W1H3B27BOMA1 |
| Manufacturer | Infineon Technologies |
| Category | Discrete Semiconductor › Transistors - IGBTs - Modules |
| Description | IGBT MOD 1200V 30A 375W |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | DF200R12W1H3B27BOMA1 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Dec 07 - Dec 11 2025(Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment | 
|
| Shipping |  |
| Part Number: | DF200R12W1H3B27BOMA1 |
| Brand: | Infineon Technologies |
| Lifecycle: | Active |
| RoHS: | Lead free / RoHS Compliant |
| Category: | Discrete Semiconductor |
| Subcategory: | Transistors - IGBTs - Modules |
| Manufacturer: | Infineon Technologies |
| Product Status: | Active |
| IGBT Type: | - |
| Configuration: | 2 Independent |
| Voltage - Collector Emitter Breakdown (Max): | 1200 V |
| Current - Collector (Ic) (Max): | 30 A |
| Power - Max: | 375 W |
| Vce(on) (Max) @ Vge, Ic: | 1.3V @ 15V, 30A |
| Current - Collector Cutoff (Max): | 1 mA |
| Input Capacitance (Cies) @ Vce: | 2 nF @ 25 V |
| Input: | Standard |
| NTC Thermistor: | Yes |
| Operating Temperature: | -40°C ~ 150°C |
| Mounting Type: | Chassis Mount |
| Package / Case: | Module |
| Supplier Device Package: | Module |
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| In Stock | 1402 pieces - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 24 | $51.67958 | $1240.30992 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
Please feel free to contact us for details.
