BTS282ZE3230AKSA2

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Part Number	BTS282ZE3230AKSA2
Manufacturer	Infineon Technologies
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 49V 80A TO220-7
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	BTS282ZE3230AKSA2 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 14 - Nov 18 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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Shipping

BTS282ZE3230AKSA2 Specifications

Part Number:	BTS282ZE3230AKSA2
Brand:	Infineon Technologies
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Infineon Technologies
Product Status:	Not For New Designs
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	49 V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	6.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id:	2V @ 240µA
Gate Charge (Qg) (Max) @ Vgs:	232 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	4800 pF @ 25 V
FET Feature:	Temperature Sensing Diode
Power Dissipation (Max):	300W (Tc)
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PG-TO220-7-12
Package / Case:	TO-220-7

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