BSZ086P03NS3EGATMA1

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Part Number	BSZ086P03NS3EGATMA1
Manufacturer	Infineon Technologies
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET P-CH 30V 13.5A/40A TSDSON
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	BSZ086P03NS3EGATMA1 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 30 - Jan 03 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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BSZ086P03NS3EGATMA1 Specifications

Part Number:	BSZ086P03NS3EGATMA1
Brand:	Infineon Technologies
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Infineon Technologies
Product Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	13.5A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Rds On (Max) @ Id, Vgs:	8.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:	3.1V @ 105µA
Gate Charge (Qg) (Max) @ Vgs:	57.5 nC @ 10 V
Vgs (Max):	±25V
Input Capacitance (Ciss) (Max) @ Vds:	4785 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	2.1W (Ta), 69W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TSDSON-8
Package / Case:	8-PowerTDFN

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