BSP52H6327XTSA1

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Part Number	BSP52H6327XTSA1
Manufacturer	Infineon Technologies
Category	Discrete Semiconductor › Transistors - Bipolar (BJT) - Single
Description	TRANS NPN DARL 80V 1A SOT223-4
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	BSP52H6327XTSA1 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 27 - Dec 01 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

BSP52H6327XTSA1 Specifications

Part Number:	BSP52H6327XTSA1
Brand:	Infineon Technologies
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - Bipolar (BJT) - Single
Manufacturer:	Infineon Technologies
Product Status:	Not For New Designs
Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	80 V
Vce Saturation (Max) @ Ib, Ic:	1.8V @ 1mA, 1A
Current - Collector Cutoff (Max):	10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	2000 @ 500mA, 10V
Power - Max:	1.5 W
Frequency - Transition:	200MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	PG-SOT223-4

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