For Reference Only
Part Number | BSM75GAR120DN2HOSA1 |
Manufacturer | Infineon Technologies |
Category | Discrete Semiconductor › Transistors - IGBTs - Modules |
Description | IGBT MOD 1200V 30A 235W |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | BSM75GAR120DN2HOSA1 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 10 - Nov 14 2024(Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
Part Number: | BSM75GAR120DN2HOSA1 |
Brand: | Infineon Technologies |
Lifecycle: | Active |
RoHS: | Lead free / RoHS Compliant |
Category: | Discrete Semiconductor |
Subcategory: | Transistors - IGBTs - Modules |
Manufacturer: | Infineon Technologies |
Product Status: | Obsolete |
IGBT Type: | Trench Field Stop |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 1200 V |
Current - Collector (Ic) (Max): | 30 A |
Power - Max: | 235 W |
Vce(on) (Max) @ Vge, Ic: | 2.2V @ 15V, 15A |
Current - Collector Cutoff (Max): | 400 µA |
Input Capacitance (Cies) @ Vce: | 1 nF @ 25 V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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In Stock | 1207 pieces - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
Qty. | Unit Price | Ext. Price |
---|---|---|
10 | $74.79400 | $747.94 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
Please feel free to contact us for details.