BSM50GD120DN2E3226BOSA1

BSM50GD120DN2E3226BOSA1
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Part Number BSM50GD120DN2E3226BOSA1
Manufacturer Infineon Technologies
Category Discrete SemiconductorTransistors - IGBTs - Modules
Description IGBT MOD 1200V 50A 350W
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models BSM50GD120DN2E3226BOSA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 27 - Dec 31 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

BSM50GD120DN2E3226BOSA1 Specifications

Part Number:BSM50GD120DN2E3226BOSA1
Brand:Infineon Technologies
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - IGBTs - Modules
Manufacturer:Infineon Technologies
Product Status:Not For New Designs
IGBT Type:-
Configuration:Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):50 A
Power - Max:350 W
Vce(on) (Max) @ Vge, Ic:3V @ 15V, 50A
Current - Collector Cutoff (Max):1 mA
Input Capacitance (Cies) @ Vce:3.3 nF @ 25 V
Input:Standard
NTC Thermistor:No
Operating Temperature:150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module

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In Stock 466 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
10$128.00000$1280

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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