BSG0813NDIATMA1

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Part Number	BSG0813NDIATMA1
Manufacturer	Infineon Technologies
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Arrays
Description	MOSFET 2N-CH 25V 19A/33A TISON8
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	BSG0813NDIATMA1 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 25 - Nov 29 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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Shipping

BSG0813NDIATMA1 Specifications

Part Number:	BSG0813NDIATMA1
Brand:	Infineon Technologies
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Arrays
Manufacturer:	Infineon Technologies
Product Status:	Active
FET Type:	2 N-Channel (Dual) Asymmetrical
FET Feature:	Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss):	25V
Current - Continuous Drain (Id) @ 25°C:	19A, 33A
Rds On (Max) @ Id, Vgs:	3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	1100pF @ 12V
Power - Max:	2.5W
Operating Temperature:	-55°C ~ 155°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-PowerTDFN
Supplier Device Package:	PG-TISON-8

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