BSG0810NDIATMA1

BSG0810NDIATMA1
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Part Number BSG0810NDIATMA1
Manufacturer Infineon Technologies
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 25V 19A/39A 8TISON
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models BSG0810NDIATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 30 - Jan 03 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

BSG0810NDIATMA1 Specifications

Part Number:BSG0810NDIATMA1
Brand:Infineon Technologies
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Arrays
Manufacturer:Infineon Technologies
Product Status:Active
FET Type:2 N-Channel (Dual) Asymmetrical
FET Feature:Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss):25V
Current - Continuous Drain (Id) @ 25°C:19A, 39A
Rds On (Max) @ Id, Vgs:3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:1040pF @ 12V
Power - Max:2.5W
Operating Temperature:-55°C ~ 155°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN
Supplier Device Package:PG-TISON-8

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In Stock 29048 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
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Pricing (USD)

Qty. Unit Price Ext. Price
5000$1.12112$5605.6

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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