For Reference Only
Part Number | BSG0810NDIATMA1 |
Manufacturer | Infineon Technologies |
Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Arrays |
Description | MOSFET 2N-CH 25V 19A/39A 8TISON |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | BSG0810NDIATMA1 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 25 - Nov 29 2024(Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
Part Number: | BSG0810NDIATMA1 |
Brand: | Infineon Technologies |
Lifecycle: | Active |
RoHS: | Lead free / RoHS Compliant |
Category: | Discrete Semiconductor |
Subcategory: | Transistors - FETs, MOSFETs - Arrays |
Manufacturer: | Infineon Technologies |
Product Status: | Active |
FET Type: | 2 N-Channel (Dual) Asymmetrical |
FET Feature: | Logic Level Gate, 4.5V Drive |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 19A, 39A |
Rds On (Max) @ Id, Vgs: | 3mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 8.4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1040pF @ 12V |
Power - Max: | 2.5W |
Operating Temperature: | -55°C ~ 155°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PG-TISON-8 |
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In Stock | 29048 pieces - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
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Qty. | Unit Price | Ext. Price |
---|---|---|
5000 | $1.12112 | $5605.6 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
Please feel free to contact us for details.