BSC0910NDIATMA1

BSC0910NDIATMA1
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Part Number BSC0910NDIATMA1
Manufacturer Infineon Technologies
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 25V 16A/31A TISON8
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models BSC0910NDIATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 11 - Nov 15 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

BSC0910NDIATMA1 Specifications

Part Number:BSC0910NDIATMA1
Brand:Infineon Technologies
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Arrays
Manufacturer:Infineon Technologies
Product Status:Active
FET Type:2 N-Channel (Dual) Asymmetrical
FET Feature:Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss):25V
Current - Continuous Drain (Id) @ 25°C:11A, 31A
Rds On (Max) @ Id, Vgs:4.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:4500pF @ 12V
Power - Max:1W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN
Supplier Device Package:PG-TISON-8

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Quick Inquiry

In Stock 40731 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
5000$0.97426$4871.3

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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