BSC046N02KSGAUMA1

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Part Number	BSC046N02KSGAUMA1
Manufacturer	Infineon Technologies
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 20V 19A/80A TDSON
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	BSC046N02KSGAUMA1 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 09 - Nov 13 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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BSC046N02KSGAUMA1 Specifications

Part Number:	BSC046N02KSGAUMA1
Brand:	Infineon Technologies
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Infineon Technologies
Product Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	19A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Rds On (Max) @ Id, Vgs:	4.6mOhm @ 50A, 4.5V
Vgs(th) (Max) @ Id:	1.2V @ 110µA
Gate Charge (Qg) (Max) @ Vgs:	27.6 nC @ 4.5 V
Vgs (Max):	±12V
Input Capacitance (Ciss) (Max) @ Vds:	4100 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	2.8W (Ta), 48W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TDSON-8-1
Package / Case:	8-PowerTDFN

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