BFP640E6327

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Part Number	BFP640E6327
Manufacturer	Infineon Technologies
Category	Discrete Semiconductor › Transistors - Bipolar (BJT) - RF
Description	RF BIPOLAR TRANSISTOR
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	BFP640E6327 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 30 - Jan 03 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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BFP640E6327 Specifications

Part Number:	BFP640E6327
Brand:	Infineon Technologies
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - Bipolar (BJT) - RF
Manufacturer:	Infineon Technologies
Product Status:	Active
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	4.5V
Frequency - Transition:	40GHz
Noise Figure (dB Typ @ f):	0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Gain:	24dB
Power - Max:	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	110 @ 30mA, 3V
Current - Collector (Ic) (Max):	50mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-82A, SOT-343
Supplier Device Package:	PG-SOT343-4

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