BFP182WE6327

BFP182WE6327
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Part Number BFP182WE6327
Manufacturer Infineon Technologies
Category Discrete SemiconductorTransistors - Bipolar (BJT) - RF
Description RF TRANSISTOR, L BAND, NPN
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models BFP182WE6327 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 25 - Nov 29 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

BFP182WE6327 Specifications

Part Number:BFP182WE6327
Brand:Infineon Technologies
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - Bipolar (BJT) - RF
Manufacturer:Infineon Technologies
Product Status:Active
Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):12V
Frequency - Transition:8GHz
Noise Figure (dB Typ @ f):0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Gain:22dB
Power - Max:250mW
DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 10mA, 8V
Current - Collector (Ic) (Max):35mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-82A, SOT-343
Supplier Device Package:PG-SOT343-4

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Quick Inquiry

In Stock 80241 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$0.08000$0.08

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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