BDP953E6327HTSA1

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Part Number	BDP953E6327HTSA1
Manufacturer	Infineon Technologies
Category	Discrete Semiconductor › Transistors - Bipolar (BJT) - Single
Description	TRANS NPN 100V 3A SOT223-4
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	BDP953E6327HTSA1 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 08 - Nov 12 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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BDP953E6327HTSA1 Specifications

Part Number:	BDP953E6327HTSA1
Brand:	Infineon Technologies
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - Bipolar (BJT) - Single
Manufacturer:	Infineon Technologies
Product Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	3 A
Voltage - Collector Emitter Breakdown (Max):	100 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 200mA, 2A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 500mA, 1V
Power - Max:	5 W
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	PG-SOT223-4-10

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