BCW66KGE6327HTSA1

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Part Number	BCW66KGE6327HTSA1
Manufacturer	Infineon Technologies
Category	Discrete Semiconductor › Transistors - Bipolar (BJT) - Single
Description	TRANS NPN 45V 0.8A SOT23
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	BCW66KGE6327HTSA1 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Sep 20 - Sep 24 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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BCW66KGE6327HTSA1 Specifications

Part Number:	BCW66KGE6327HTSA1
Brand:	Infineon Technologies
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - Bipolar (BJT) - Single
Manufacturer:	Infineon Technologies
Product Status:	Not For New Designs
Transistor Type:	NPN
Current - Collector (Ic) (Max):	800 mA
Voltage - Collector Emitter Breakdown (Max):	45 V
Vce Saturation (Max) @ Ib, Ic:	450mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	160 @ 100mA, 1V
Power - Max:	500 mW
Frequency - Transition:	170MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	PG-SOT23

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