BCR35PNE6327BTSA1

BCR35PNE6327BTSA1
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Part Number BCR35PNE6327BTSA1
Manufacturer Infineon Technologies
Category Discrete SemiconductorTransistors - Bipolar (BJT) - Arrays, Pre-Biased
Description TRANS NPN/PNP PREBIAS SOT363
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models BCR35PNE6327BTSA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 25 - Nov 29 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

BCR35PNE6327BTSA1 Specifications

Part Number:BCR35PNE6327BTSA1
Brand:Infineon Technologies
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer:Infineon Technologies
Product Status:Obsolete
Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):10kOhms
Resistor - Emitter Base (R2):47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):-
Frequency - Transition:150MHz
Power - Max:250mW
Mounting Type:Surface Mount
Package / Case:6-VSSOP, SC-88, SOT-363
Supplier Device Package:PG-SOT363-PO

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In Stock 43607 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$0.00000$0

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