BCR198WE6327BTSA1

BCR198WE6327BTSA1
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Part Number BCR198WE6327BTSA1
Manufacturer Infineon Technologies
Category Discrete SemiconductorTransistors - Bipolar (BJT) - Single, Pre-Biased
Description TRANS PREBIAS PNP 250MW SOT323-3
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models BCR198WE6327BTSA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Nov 30 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

BCR198WE6327BTSA1 Specifications

Part Number:BCR198WE6327BTSA1
Brand:Infineon Technologies
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer:Infineon Technologies
Product Status:Obsolete
Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):47 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:190 MHz
Power - Max:250 mW
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323

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In Stock 42921 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$0.00000$0

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