BCR196E6327

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Part Number	BCR196E6327
Manufacturer	Infineon Technologies
Category	Discrete Semiconductor › Transistors - Bipolar (BJT) - Single, Pre-Biased
Description	BIPOLAR DIGITAL TRANSISTOR
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	BCR196E6327 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 24 - Nov 28 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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BCR196E6327 Specifications

Part Number:	BCR196E6327
Brand:	Infineon Technologies
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer:	Infineon Technologies
Product Status:	Active
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	70 mA
Voltage - Collector Emitter Breakdown (Max):	50 V
Resistor - Base (R1):	47 kOhms
Resistor - Emitter Base (R2):	22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):	100nA (ICBO)
Frequency - Transition:	150 MHz
Power - Max:	200 mW
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	PG-SOT23-3-11

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