BC857BWE6327

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Part Number	BC857BWE6327
Manufacturer	Infineon Technologies
Category	Discrete Semiconductor › Transistors - Bipolar (BJT) - Single
Description	BIPOLAR GEN PURPOSE TRANSISTOR
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	BC857BWE6327 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 25 - Nov 29 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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Shipping

BC857BWE6327 Specifications

Part Number:	BC857BWE6327
Brand:	Infineon Technologies
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - Bipolar (BJT) - Single
Manufacturer:	Infineon Technologies
Product Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	100 mA
Voltage - Collector Emitter Breakdown (Max):	45 V
Vce Saturation (Max) @ Ib, Ic:	650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	220 @ 2mA, 5V
Power - Max:	250 mW
Frequency - Transition:	250MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	PG-SOT323

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