AIHD10N60RFATMA1

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Part Number	AIHD10N60RFATMA1
Manufacturer	Infineon Technologies
Category	Discrete Semiconductor › Transistors - IGBTs - Single
Description	IC DISCRETE 600V TO252-3
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	AIHD10N60RFATMA1 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 25 - Dec 29 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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AIHD10N60RFATMA1 Specifications

Part Number:	AIHD10N60RFATMA1
Brand:	Infineon Technologies
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - IGBTs - Single
Manufacturer:	Infineon Technologies
Product Status:	Active
IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	20 A
Current - Collector Pulsed (Icm):	30 A
Vce(on) (Max) @ Vge, Ic:	2.5V @ 15V, 10A
Power - Max:	150 W
Switching Energy:	190µJ (on), 160µJ (off)
Input Type:	Standard
Gate Charge:	64 nC
Td (on/off) @ 25°C:	12ns/168ns
Test Condition:	400V, 10A, 26Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	PG-TO252-3-313

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