AIHD06N60RATMA1

Enlarge

For Reference Only

Part Number	AIHD06N60RATMA1
Manufacturer	Infineon Technologies
Category	Discrete Semiconductor › Transistors - IGBTs - Single
Description	IC DISCRETE 600V TO252-3
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	AIHD06N60RATMA1 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Sep 21 - Sep 25 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

AIHD06N60RATMA1 Specifications

Part Number:	AIHD06N60RATMA1
Brand:	Infineon Technologies
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - IGBTs - Single
Manufacturer:	Infineon Technologies
Product Status:	Active
IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	12 A
Current - Collector Pulsed (Icm):	18 A
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 6A
Power - Max:	100 W
Switching Energy:	110µJ (on), 220µJ (off)
Input Type:	Standard
Gate Charge:	48 nC
Td (on/off) @ 25°C:	12ns/127ns
Test Condition:	400V, 6A, 23Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	PG-TO252-3-313

IRG4RC10UTRR	IGBT 600V 8.5A 38W DPAK	42993 More on Order
IXGR80N60B	IGBT 600V ISOPLUS247	63778 More on Order
FGH30T65UPDT_F155	INSULATED GATE BIPOLAR TRANSISTO	59963 More on Order
IXGH20N120BD1	IGBT 1200V 40A 190W TO247	72863 More on Order
STGW60V60DLF	IGBT BIPO 600V 60A TO247	73186 More on Order
IXYQ40N65C3D1	IGBT	46415 More on Order
IKD04N60RBTMA1	IGBT WITHOUT ANTI-PARALLEL DIODE	31880 More on Order
STGP10NC60K	IGBT 600V 20A 60W TO220	48678 More on Order
IRGI4060DPBF	IGBT 600V 14A 37W TO220ABFP	89103 More on Order
FGP90N30TU	IGBT, 90A, 300V, N-CHANNEL	84934 More on Order
63-8035	IGBT CHIP	63730 More on Order
SIGC81T60NCX7SA2	IGBT 3 CHIP 600V WAFER	82310 More on Order