RF1S50N06

RF1S50N06
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Part Number RF1S50N06
Manufacturer Harris Corporation
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description 50A, 60V, 0.022 OHM, N-CHANNEL
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models RF1S50N06 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 23 - Dec 27 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

RF1S50N06 Specifications

Part Number:RF1S50N06
Brand:Harris Corporation
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Harris Corporation
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:22mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:150 nC @ 20 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2020 pF @ 25 V
FET Feature:-
Power Dissipation (Max):131W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK (TO-262)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA

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Pricing (USD)

Qty. Unit Price Ext. Price
1$0.96000$0.96

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