HGTG32N60E2

HGTG32N60E2
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Part Number HGTG32N60E2
Manufacturer Harris Corporation
Category Discrete SemiconductorTransistors - IGBTs - Single
Description 50A, 600V N-CHANNEL IGBT
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models HGTG32N60E2 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 24 - Dec 28 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

HGTG32N60E2 Specifications

Part Number:HGTG32N60E2
Brand:Harris Corporation
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - IGBTs - Single
Manufacturer:Harris Corporation
Product Status:Active
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):50 A
Current - Collector Pulsed (Icm):200 A
Vce(on) (Max) @ Vge, Ic:2.9V @ 15V, 32A
Power - Max:208 W
Switching Energy:-
Input Type:Standard
Gate Charge:265 nC
Td (on/off) @ 25°C:-
Test Condition:-
Reverse Recovery Time (trr):-
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247

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In Stock 11986 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
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Pricing (USD)

Qty. Unit Price Ext. Price
1$7.33000$7.33

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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