HGTG12N60C3DR

HGTG12N60C3DR
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Part Number HGTG12N60C3DR
Manufacturer Harris Corporation
Category Discrete SemiconductorTransistors - IGBTs - Single
Description UFS SERIES N-CHANNEL IGBT
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models HGTG12N60C3DR PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 14 - Nov 18 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

HGTG12N60C3DR Specifications

Part Number:HGTG12N60C3DR
Brand:Harris Corporation
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - IGBTs - Single
Manufacturer:Harris Corporation
Product Status:Active
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):24 A
Current - Collector Pulsed (Icm):48 A
Vce(on) (Max) @ Vge, Ic:2.2V @ 15V, 12A
Power - Max:104 W
Switching Energy:400µJ (on), 340µJ (off)
Input Type:Standard
Gate Charge:71 nC
Td (on/off) @ 25°C:37ns/120ns
Test Condition:480V, 12A, 25Ohm, 15V
Reverse Recovery Time (trr):37 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247

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In Stock 55147 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$2.07000$2.07

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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