HGTD3N60B3

HGTD3N60B3
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Part Number HGTD3N60B3
Manufacturer Harris Corporation
Category Discrete SemiconductorTransistors - IGBTs - Single
Description 7A, 600V, N-CHANNEL IGBT
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models HGTD3N60B3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Sep 18 - Sep 22 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

HGTD3N60B3 Specifications

Part Number:HGTD3N60B3
Brand:Harris Corporation
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - IGBTs - Single
Manufacturer:Harris Corporation
Product Status:Active
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):7 A
Current - Collector Pulsed (Icm):20 A
Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 3.5A
Power - Max:33.3 W
Switching Energy:66µJ (on), 88µJ (off)
Input Type:Standard
Gate Charge:21 nC
Td (on/off) @ 25°C:18ns/105ns
Test Condition:480V, 3.5A, 82Ohm, 15V
Reverse Recovery Time (trr):16 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:I-PAK

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In Stock 79954 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$0.47000$0.47

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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