HGT4E30N60B3S

HGT4E30N60B3S
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Part Number HGT4E30N60B3S
Manufacturer Harris Corporation
Category Discrete SemiconductorTransistors - Bipolar (BJT) - Single
Description IGBT 60A, 600V, N CHANNEL, TO 26
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models HGT4E30N60B3S PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Sep 21 - Sep 25 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

HGT4E30N60B3S Specifications

Part Number:HGT4E30N60B3S
Brand:Harris Corporation
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - Bipolar (BJT) - Single
Manufacturer:Harris Corporation
Product Status:Active
Transistor Type:-
Current - Collector (Ic) (Max):-
Voltage - Collector Emitter Breakdown (Max):-
Vce Saturation (Max) @ Ib, Ic:-
Current - Collector Cutoff (Max):-
DC Current Gain (hFE) (Min) @ Ic, Vce:-
Power - Max:-
Frequency - Transition:-
Operating Temperature:-
Mounting Type:-
Package / Case:-
Supplier Device Package:-

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Quick Inquiry

In Stock 25103 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$4.43000$4.43

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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