HGT1S12N60B3

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Part Number	HGT1S12N60B3
Manufacturer	Harris Corporation
Category	Discrete Semiconductor › Transistors - IGBTs - Single
Description	27A, 600V, N-CHANNEL IGBT
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	HGT1S12N60B3 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 29 - Jan 02 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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Shipping

HGT1S12N60B3 Specifications

Part Number:	HGT1S12N60B3
Brand:	Harris Corporation
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - IGBTs - Single
Manufacturer:	Harris Corporation
Product Status:	Active
IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	27 A
Current - Collector Pulsed (Icm):	110 A
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 12A
Power - Max:	104 W
Switching Energy:	304µJ (on), 250µJ (off)
Input Type:	Standard
Gate Charge:	68 nC
Td (on/off) @ 25°C:	26ns/150ns
Test Condition:	480V, 12A, 25Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	I2PAK (TO-262)

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