G60N10T

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Part Number	G60N10T
Manufacturer	Goford Semiconductor
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	N100V,RD(MAX)<25M@10V,RD(MAX)<30
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	G60N10T PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 01 - Dec 05 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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G60N10T Specifications

Part Number:	G60N10T
Brand:	Goford Semiconductor
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Goford Semiconductor
Product Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	25mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	146 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	3970 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	160W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220
Package / Case:	TO-220-3

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