G12P03D3

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Part Number	G12P03D3
Manufacturer	Goford Semiconductor
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	P30V,RD(MAX)<20M@-10V,RD(MAX)<26
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	G12P03D3 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 27 - Dec 31 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

G12P03D3 Specifications

Part Number:	G12P03D3
Brand:	Goford Semiconductor
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Goford Semiconductor
Product Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	20mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	24.5 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1253 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	3W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-DFN (3.15x3.05)
Package / Case:	8-PowerVDFN

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