G5S12008D

G5S12008D
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Part Number G5S12008D
Manufacturer Global Power Technology-GPT
Category Discrete SemiconductorDiodes - Rectifiers - Single
Description SIC SCHOTTKY DIODE 1200V 8A 2-PI
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models G5S12008D PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 28 - Dec 02 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

G5S12008D Specifications

Part Number:G5S12008D
Brand:Global Power Technology-GPT
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Diodes - Rectifiers - Single
Manufacturer:Global Power Technology-GPT
Product Status:Active
Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):26.1A (DC)
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 8 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:50 µA @ 1200 V
Capacitance @ Vr, F:550pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:TO-263
Operating Temperature - Junction:-55°C ~ 175°C

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In Stock 11771 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$8.61000$8.61

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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