G5S12008C

Enlarge

For Reference Only

Part Number	G5S12008C
Manufacturer	Global Power Technology-GPT
Category	Discrete Semiconductor › Diodes - Rectifiers - Single
Description	SIC SCHOTTKY DIODE 1200V 8A 2-PI
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	G5S12008C PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Sep 21 - Sep 25 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

G5S12008C Specifications

Part Number:	G5S12008C
Brand:	Global Power Technology-GPT
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Diodes - Rectifiers - Single
Manufacturer:	Global Power Technology-GPT
Product Status:	Active
Diode Type:	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):	1200 V
Current - Average Rectified (Io):	28.9A (DC)
Voltage - Forward (Vf) (Max) @ If:	1.7 V @ 8 A
Speed:	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):	0 ns
Current - Reverse Leakage @ Vr:	50 µA @ 1200 V
Capacitance @ Vr, F:	550pF @ 0V, 1MHz
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252
Operating Temperature - Junction:	-55°C ~ 175°C

6A1-TP	DIODE GEN PURP 100V 6A R6	34206 More on Order
RRE07VTM6SFHTR	RECTIFIER DIODES (CORRESPONDS TO	31719 More on Order
G4S06510AT	SIC SCHOTTKY DIODE 650V 10A 2-PI	21003 More on Order
US1D-M3/5AT	DIODE GEN PURP 200V 1A DO214AC	75559 More on Order
VS-41HF10	DIODE GEN PURP 100V 40A DO203AB	12253 More on Order
VS-1EFU06HM3/I	DIODE GEN PURP 600V 1A DO219AB	75659 More on Order
BAS19W_R1_00001	SURFACE MOUNT SWITCHING DIODE	34545 More on Order
UF800F_T0_00001	ULTRA FAST RECOVERY RECTIFIERS	55124 More on Order
SICR20650WT	SIC SCHOTTKY 20A, 650V TO-247AD	9202 More on Order
IDD06SG60CXTMA2	DIODE SCHOTTKY 600V 6A TO252-3	24544 More on Order
SR32F_R2_00001	SURFACE MOUNT SCHOTTKY BARRIER R	95734 More on Order
40HFR120	DO5 40 AMP SILICON RECTFIER AK	46759 More on Order