G4S06510PT

Enlarge

For Reference Only

Part Number	G4S06510PT
Manufacturer	Global Power Technology-GPT
Category	Discrete Semiconductor › Diodes - Rectifiers - Single
Description	SIC SCHOTTKY DIODE 650V 10A 2-PI
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	G4S06510PT PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 24 - Dec 28 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

G4S06510PT Specifications

Part Number:	G4S06510PT
Brand:	Global Power Technology-GPT
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Diodes - Rectifiers - Single
Manufacturer:	Global Power Technology-GPT
Product Status:	Active
Diode Type:	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):	650 V
Current - Average Rectified (Io):	31.2A (DC)
Voltage - Forward (Vf) (Max) @ If:	1.7 V @ 10 A
Speed:	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):	0 ns
Current - Reverse Leakage @ Vr:	50 µA @ 650 V
Capacitance @ Vr, F:	550pF @ 0V, 1MHz
Mounting Type:	Through Hole
Package / Case:	TO-247-2
Supplier Device Package:	TO-247AC
Operating Temperature - Junction:	-55°C ~ 175°C

CUS15S30,H3F	DIODE SCHOTTKY 30V 1.5A	64278 More on Order
EGF1A-E3/5CA	DIODE GEN PURP 50V 1A DO214BA	81338 More on Order
R5021210RSZT	DIODE GEN PURP	675 More on Order
BAS40-04B5000	RECTIFIER DIODE, SCHOTTKY	38013 More on Order
S2A-13-F	DIODE GEN PURP 50V 1.5A SMB	83422 More on Order
HSM123JTR	DIODE FOR HIGH SPEED SWITCHING	70969 More on Order
1N4006RLG	DIODE GEN PURP 800V 1A AXIAL	35868 More on Order
VS-T40HFL60S02	DIODE GEN PURP 600V 40A D-55	4584 More on Order
MURS240T3G	DIODE GEN PURP 400V 2A SMB	61846 More on Order
MMBD1501A	DIODE GEN PURP 200V 200MA SOT23	54158 More on Order
SKR240/12	250A 1200V DO-9 M16 CATHODE TO C	3228 More on Order
S1ML	DIODE GEN PURP 1KV 1A SUB SMA	86989 More on Order