For Reference Only
Part Number | G3S12010D |
Manufacturer | Global Power Technology-GPT |
Category | Discrete Semiconductor › Diodes - Rectifiers - Single |
Description | SIC SCHOTTKY DIODE 1200V 10A 2-P |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | G3S12010D PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Dec 25 - Dec 29 2024(Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
Part Number: | G3S12010D |
Brand: | Global Power Technology-GPT |
Lifecycle: | Active |
RoHS: | Lead free / RoHS Compliant |
Category: | Discrete Semiconductor |
Subcategory: | Diodes - Rectifiers - Single |
Manufacturer: | Global Power Technology-GPT |
Product Status: | Active |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 1200 V |
Current - Average Rectified (Io): | 33.2A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.7 V @ 10 A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0 ns |
Current - Reverse Leakage @ Vr: | 50 µA @ 1200 V |
Capacitance @ Vr, F: | 765pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 |
Operating Temperature - Junction: | -55°C ~ 175°C |
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In Stock | 7941 pieces - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
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Qty. | Unit Price | Ext. Price |
---|---|---|
1 | $12.02000 | $12.02 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
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