G3S12010C

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Part Number	G3S12010C
Manufacturer	Global Power Technology-GPT
Category	Discrete Semiconductor › Diodes - Rectifiers - Single
Description	SIC SCHOTTKY DIODE 1200V 10A 2-P
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	G3S12010C PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Sep 21 - Sep 25 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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G3S12010C Specifications

Part Number:	G3S12010C
Brand:	Global Power Technology-GPT
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Diodes - Rectifiers - Single
Manufacturer:	Global Power Technology-GPT
Product Status:	Active
Diode Type:	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):	1200 V
Current - Average Rectified (Io):	33.2A (DC)
Voltage - Forward (Vf) (Max) @ If:	1.7 V @ 10 A
Speed:	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):	0 ns
Current - Reverse Leakage @ Vr:	50 µA @ 1200 V
Capacitance @ Vr, F:	765pF @ 0V, 1MHz
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252
Operating Temperature - Junction:	-55°C ~ 175°C

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