G3S12010C

Enlarge

For Reference Only

Part Number	G3S12010C
Manufacturer	Global Power Technology-GPT
Category	Discrete Semiconductor › Diodes - Rectifiers - Single
Description	SIC SCHOTTKY DIODE 1200V 10A 2-P
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	G3S12010C PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 14 - Nov 18 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

G3S12010C Specifications

Part Number:	G3S12010C
Brand:	Global Power Technology-GPT
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Diodes - Rectifiers - Single
Manufacturer:	Global Power Technology-GPT
Product Status:	Active
Diode Type:	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):	1200 V
Current - Average Rectified (Io):	33.2A (DC)
Voltage - Forward (Vf) (Max) @ If:	1.7 V @ 10 A
Speed:	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):	0 ns
Current - Reverse Leakage @ Vr:	50 µA @ 1200 V
Capacitance @ Vr, F:	765pF @ 0V, 1MHz
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252
Operating Temperature - Junction:	-55°C ~ 175°C

RS1G-E3/61T	DIODE GEN PURP 400V 1A DO214AC	68904 More on Order
HER608GP-TP	DIODE GPP HE 6A R-6	85387 More on Order
CGRB301-G	DIODE GEN PURP 50V 3A DO214AA	59798 More on Order
TSSW3U45	DIODE SCHOTTKY 45V 3A SOD123W	61247 More on Order
CMDSH-3 TR PBFREE	DIODE SCHOTTKY 30V 100MA SOD323	91642 More on Order
RS2A-M3/5BT	DIODE GEN PURP 50V 1.5A DO214AA	94469 More on Order
US1MFL-TP	DIODE GEN PURP 1KV 1A DO221AC	46616 More on Order
DHG60I600HA	DIODE GEN PURP 600V 60A TO247	16330 More on Order
SBRD8320G-VF01	DIODE SCHOTTKY 20V 3A DPAK	32192 More on Order
1N5417	DIODE GEN PURP 200V 3A AXIAL	20686 More on Order
1N1193R	20 AMP SILICON RECTIFIER DO-5	38573 More on Order
ER106_R2_00001	SUPERFAST RECOVERY RECTIFIERS	98579 More on Order