G3S12010BM

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Part Number	G3S12010BM
Manufacturer	Global Power Technology-GPT
Category	Discrete Semiconductor › Diodes - Rectifiers - Arrays
Description	SIC SCHOTTKY DIODE 1200V 10A 3-P
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	G3S12010BM PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 16 - Nov 20 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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G3S12010BM Specifications

Part Number:	G3S12010BM
Brand:	Global Power Technology-GPT
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Diodes - Rectifiers - Arrays
Manufacturer:	Global Power Technology-GPT
Product Status:	Active
Diode Configuration:	1 Pair Common Cathode
Diode Type:	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):	1200 V
Current - Average Rectified (Io) (per Diode):	19.8A (DC)
Voltage - Forward (Vf) (Max) @ If:	1.7 V @ 5 A
Speed:	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):	0 ns
Current - Reverse Leakage @ Vr:	50 µA @ 1200 V
Operating Temperature - Junction:	-55°C ~ 175°C
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247AB

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