G3S12010B

G3S12010B
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Part Number G3S12010B
Manufacturer Global Power Technology-GPT
Category Discrete SemiconductorDiodes - Rectifiers - Arrays
Description SIC SCHOTTKY DIODE 1200V 10A 3-P
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models G3S12010B PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 26 - Dec 30 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

G3S12010B Specifications

Part Number:G3S12010B
Brand:Global Power Technology-GPT
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Diodes - Rectifiers - Arrays
Manufacturer:Global Power Technology-GPT
Product Status:Active
Diode Configuration:1 Pair Common Cathode
Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io) (per Diode):39A (DC)
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 5 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:50 µA @ 1200 V
Operating Temperature - Junction:-55°C ~ 175°C
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247AB

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In Stock 5515 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$17.14000$17.14

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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