G3S12002H

Enlarge

For Reference Only

Part Number	G3S12002H
Manufacturer	Global Power Technology-GPT
Category	Discrete Semiconductor › Diodes - Rectifiers - Single
Description	SIC SCHOTTKY DIODE 1200V 2A 2-PI
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	G3S12002H PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 14 - Nov 18 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

G3S12002H Specifications

Part Number:	G3S12002H
Brand:	Global Power Technology-GPT
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Diodes - Rectifiers - Single
Manufacturer:	Global Power Technology-GPT
Product Status:	Active
Diode Type:	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):	1200 V
Current - Average Rectified (Io):	7.3A (DC)
Voltage - Forward (Vf) (Max) @ If:	1.7 V @ 2 A
Speed:	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):	0 ns
Current - Reverse Leakage @ Vr:	50 µA @ 1200 V
Capacitance @ Vr, F:	136pF @ 0V, 1MHz
Mounting Type:	Through Hole
Package / Case:	TO-220-2 Full Pack
Supplier Device Package:	TO-220F
Operating Temperature - Junction:	-55°C ~ 175°C

VS-40HFL100S05	DIODE GEN PURP 1KV 40A DO203AB	8709 More on Order
ES2J_R1_00001	SMA, SUPER	39422 More on Order
JANTX1N3613	DIODE GEN PURP 600V 1A AXIAL	16277 More on Order
SK54LHE3-TP	SCHOTTKY BARRIER RECTIFIERS 40V	41417 More on Order
FESB8BT-E3/81	DIODE GEN PURP 100V 8A TO263AB	95281 More on Order
VS-19TQ015-M3	DIODE SCHOTTKY 15V 19A TO220AC	53776 More on Order
HSM2836C-JTR-E	DIODE FOR HIGH SPEED SWITCHING	44770 More on Order
AU2PGHM3_A/H	DIODE AVALANCHE 400V 1.6A TO277A	74868 More on Order
NRVTS10100MFST1G	DIODE SCHOTTKY 100V 10A 5DFN	72353 More on Order
STPSC6H065DI	DIODE SCHOTTKY 650V 6A TO220AC	33644 More on Order
HER108-T/B	High Efficiency DO-41 1KV 1A	72686 More on Order
SK310BH-LTP	3A 100V SCHOTTKY SMB	81181 More on Order