For Reference Only
| Part Number | GA10JT12-263 |
| Manufacturer | GeneSiC Semiconductor |
| Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Single |
| Description | TRANS SJT 1200V 25A |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | GA10JT12-263 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Nov 22 - Nov 26 2024(Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment | 
|
| Shipping |  |
| Part Number: | GA10JT12-263 |
| Brand: | GeneSiC Semiconductor |
| Lifecycle: | Active |
| RoHS: | Lead free / RoHS Compliant |
| Category: | Discrete Semiconductor |
| Subcategory: | Transistors - FETs, MOSFETs - Single |
| Manufacturer: | GeneSiC Semiconductor |
| Product Status: | Active |
| FET Type: | - |
| Technology: | SiC (Silicon Carbide Junction Transistor) |
| Drain to Source Voltage (Vdss): | 1200 V |
| Current - Continuous Drain (Id) @ 25°C: | 25A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Rds On (Max) @ Id, Vgs: | 120mOhm @ 10A |
| Vgs(th) (Max) @ Id: | - |
| Gate Charge (Qg) (Max) @ Vgs: | - |
| Vgs (Max): | - |
| Input Capacitance (Ciss) (Max) @ Vds: | 1403 pF @ 800 V |
| FET Feature: | - |
| Power Dissipation (Max): | 170W (Tc) |
| Operating Temperature: | 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | - |
| Package / Case: | - |
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| In Stock | 5744 pieces - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $20.15000 | $20.15 |
| 10 | $18.31900 | $183.19 |
| 50 | $16.94520 | $847.26 |
| 100 | $15.57130 | $1557.13 |
| 250 | $14.19740 | $3549.35 |
| 500 | $13.28142 | $6640.71 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
Please feel free to contact us for details.
