GA10JT12-263

GA10JT12-263
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Part Number GA10JT12-263
Manufacturer GeneSiC Semiconductor
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description TRANS SJT 1200V 25A
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models GA10JT12-263 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 04 - Nov 08 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

GA10JT12-263 Specifications

Part Number:GA10JT12-263
Brand:GeneSiC Semiconductor
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:GeneSiC Semiconductor
Product Status:Active
FET Type:-
Technology:SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:120mOhm @ 10A
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:1403 pF @ 800 V
FET Feature:-
Power Dissipation (Max):170W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:-
Package / Case:-

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Quick Inquiry

In Stock 5744 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$20.15000$20.15
10$18.31900$183.19
50$16.94520$847.26
100$15.57130$1557.13
250$14.19740$3549.35
500$13.28142$6640.71

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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