2N7635-GA

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Part Number	2N7635-GA
Manufacturer	GeneSiC Semiconductor
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	TRANS SJT 650V 4A TO257
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	2N7635-GA PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 16 - Nov 20 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

2N7635-GA Specifications

Part Number:	2N7635-GA
Brand:	GeneSiC Semiconductor
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	GeneSiC Semiconductor
Product Status:	Obsolete
FET Type:	-
Technology:	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	4A (Tc) (165°C)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	415mOhm @ 4A
Vgs(th) (Max) @ Id:	-
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	-
Input Capacitance (Ciss) (Max) @ Vds:	324 pF @ 35 V
FET Feature:	-
Power Dissipation (Max):	47W (Tc)
Operating Temperature:	-55°C ~ 225°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-257
Package / Case:	TO-257-3

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