GPI65005DF

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Part Number	GPI65005DF
Manufacturer	GaNPower
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	GANFET N-CH 650V 5A DFN 5X6
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	GPI65005DF PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 28 - Dec 02 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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Shipping

GPI65005DF Specifications

Part Number:	GPI65005DF
Brand:	GaNPower
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	GaNPower
Product Status:	Active
FET Type:	N-Channel
Technology:	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	5A
Drive Voltage (Max Rds On, Min Rds On):	6V
Rds On (Max) @ Id, Vgs:	-
Vgs(th) (Max) @ Id:	1.4V @ 1.75mA
Gate Charge (Qg) (Max) @ Vgs:	2.6 nC @ 6 V
Vgs (Max):	+7.5V, -12V
Input Capacitance (Ciss) (Max) @ Vds:	45 pF @ 400 V
FET Feature:	-
Power Dissipation (Max):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	Die
Package / Case:	Die

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