EPC2100ENGRT

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Part Number	EPC2100ENGRT
Manufacturer	EPC
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Arrays
Description	GANFET 2 N-CH 30V 9.5A/38A DIE
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	EPC2100ENGRT PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 07 - Dec 11 2025(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

EPC2100ENGRT Specifications

Part Number:	EPC2100ENGRT
Brand:	EPC
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Arrays
Manufacturer:	EPC
Product Status:	Active
FET Type:	2 N-Channel (Half Bridge)
FET Feature:	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	10A (Ta), 40A (Ta)
Rds On (Max) @ Id, Vgs:	8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Vgs(th) (Max) @ Id:	2.5V @ 4mA, 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs:	4.9nC @ 15V, 19nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds:	475pF @ 15V, 1960pF @ 15V
Power - Max:	-
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	Die
Supplier Device Package:	Die

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