EPC2016C

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Part Number	EPC2016C
Manufacturer	EPC
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	GANFET N-CH 100V 18A DIE
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	EPC2016C PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Sep 21 - Sep 25 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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EPC2016C Specifications

Part Number:	EPC2016C
Brand:	EPC
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	EPC
Product Status:	Active
FET Type:	N-Channel
Technology:	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	18A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	5V
Rds On (Max) @ Id, Vgs:	16mOhm @ 11A, 5V
Vgs(th) (Max) @ Id:	2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs:	4.5 nC @ 5 V
Vgs (Max):	+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds:	420 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	-
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	Die
Package / Case:	Die

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