ZXTN2010GTA

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Part Number	ZXTN2010GTA
Manufacturer	Diodes Incorporated
Category	Discrete Semiconductor › Transistors - Bipolar (BJT) - Single
Description	TRANS NPN 60V 6A SOT223-3
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	ZXTN2010GTA PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 28 - Jan 01 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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Shipping

ZXTN2010GTA Specifications

Part Number:	ZXTN2010GTA
Brand:	Diodes Incorporated
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - Bipolar (BJT) - Single
Manufacturer:	Diodes Incorporated
Product Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	6 A
Voltage - Collector Emitter Breakdown (Max):	60 V
Vce Saturation (Max) @ Ib, Ic:	260mV @ 300mA, 6A
Current - Collector Cutoff (Max):	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 2A, 1V
Power - Max:	3 W
Frequency - Transition:	130MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223-3

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