HBDM60V600W-7

HBDM60V600W-7
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Part Number HBDM60V600W-7
Manufacturer Diodes Incorporated
Category Discrete SemiconductorTransistors - Bipolar (BJT) - Arrays
Description TRANS NPN/PNP 65V/60V SOT363
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models HBDM60V600W-7 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 27 - Dec 31 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

HBDM60V600W-7 Specifications

Part Number:HBDM60V600W-7
Brand:Diodes Incorporated
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - Bipolar (BJT) - Arrays
Manufacturer:Diodes Incorporated
Product Status:Obsolete
Transistor Type:NPN, PNP
Current - Collector (Ic) (Max):500mA, 600mA
Voltage - Collector Emitter Breakdown (Max):65V, 60V
Vce Saturation (Max) @ Ib, Ic:400mV @ 10mA, 100mA, 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 1V / 100 @ 150mA, 10V
Power - Max:200mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363

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Quick Inquiry

In Stock 60351 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
3000$0.11595$347.85
6000$0.10965$657.9
15000$0.10335$1550.25
30000$0.09600$2880

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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