DRDNB26W-7

DRDNB26W-7
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Part Number DRDNB26W-7
Manufacturer Diodes Incorporated
Category Discrete SemiconductorTransistors - Bipolar (BJT) - Single, Pre-Biased
Description TRANS PREBIAS NPN/DIODE SOT363
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models DRDNB26W-7 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 17 - Nov 21 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

DRDNB26W-7 Specifications

Part Number:DRDNB26W-7
Brand:Diodes Incorporated
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer:Diodes Incorporated
Product Status:Obsolete
Transistor Type:NPN - Pre-Biased + Diode
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):220 Ohms
Resistor - Emitter Base (R2):4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:47 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:200 MHz
Power - Max:200 mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363

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