DMT10H009LFG-13

DMT10H009LFG-13
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Part Number DMT10H009LFG-13
Manufacturer Diodes Incorporated
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 13A/50A PWRDI
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models DMT10H009LFG-13 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Sep 09 - Sep 13 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

DMT10H009LFG-13 Specifications

Part Number:DMT10H009LFG-13
Brand:Diodes Incorporated
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Diodes Incorporated
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:13A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2361 pF @ 50 V
FET Feature:-
Power Dissipation (Max):2W (Ta), 30W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerDI3333-8
Package / Case:8-PowerVDFN

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Qty. Unit Price Ext. Price
1$0.54778$0.54778

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