DMN4800LSSQ-13

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Part Number	DMN4800LSSQ-13
Manufacturer	Diodes Incorporated
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 30V 8.6A 8SO
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	DMN4800LSSQ-13 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Sep 22 - Sep 26 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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DMN4800LSSQ-13 Specifications

Part Number:	DMN4800LSSQ-13
Brand:	Diodes Incorporated
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Diodes Incorporated
Product Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	8.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	14mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:	1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	8.7 nC @ 5 V
Vgs (Max):	±25V
Input Capacitance (Ciss) (Max) @ Vds:	798 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	1.46W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-SO
Package / Case:	8-SOIC (0.154", 3.90mm Width)

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