DMN4800LSSQ-13

DMN4800LSSQ-13
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Part Number DMN4800LSSQ-13
Manufacturer Diodes Incorporated
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 8.6A 8SO
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models DMN4800LSSQ-13 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 01 - Nov 05 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

DMN4800LSSQ-13 Specifications

Part Number:DMN4800LSSQ-13
Brand:Diodes Incorporated
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Diodes Incorporated
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:8.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:14mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.7 nC @ 5 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:798 pF @ 10 V
FET Feature:-
Power Dissipation (Max):1.46W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)

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Quick Inquiry

In Stock 89581 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
2500$0.21908$547.7
5000$0.20643$1032.15
12500$0.19378$2422.25
25000$0.18492$4623

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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