For Reference Only
Part Number | DMN2451UFB4Q-7B |
Manufacturer | Diodes Incorporated |
Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Single |
Description | MOSFET BVDSS: 8V~24V X2-DFN1006- |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | DMN2451UFB4Q-7B PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 16 - Nov 20 2024(Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
Part Number: | DMN2451UFB4Q-7B |
Brand: | Diodes Incorporated |
Lifecycle: | Active |
RoHS: | Lead free / RoHS Compliant |
Category: | Discrete Semiconductor |
Subcategory: | Transistors - FETs, MOSFETs - Single |
Manufacturer: | Diodes Incorporated |
Product Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 1.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 400mOhm @ 600mA, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 6.4 nC @ 10 V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 32 pF @ 16 V |
FET Feature: | - |
Power Dissipation (Max): | 660mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | X2-DFN1006-3 |
Package / Case: | 3-XFDFN |
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In Stock | 72612 pieces - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
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Qty. | Unit Price | Ext. Price |
---|---|---|
1 | $0.03740 | $0.0374 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
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