DMN10H170SFGQ-13

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Part Number	DMN10H170SFGQ-13
Manufacturer	Diodes Incorporated
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 100V PWRDI3333
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	DMN10H170SFGQ-13 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Oct 24 - Oct 28 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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DMN10H170SFGQ-13 Specifications

Part Number:	DMN10H170SFGQ-13
Brand:	Diodes Incorporated
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Diodes Incorporated
Product Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	2.9A (Ta), 8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	122mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	14.9 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	870.7 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	940mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PowerDI3333-8
Package / Case:	8-PowerVDFN

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