DMN1032UCB4-7

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Part Number	DMN1032UCB4-7
Manufacturer	Diodes Incorporated
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 12V 4.8A U-WLB1010-4
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	DMN1032UCB4-7 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 10 - Nov 14 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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DMN1032UCB4-7 Specifications

Part Number:	DMN1032UCB4-7
Brand:	Diodes Incorporated
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Diodes Incorporated
Product Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	12 V
Current - Continuous Drain (Id) @ 25°C:	4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Rds On (Max) @ Id, Vgs:	26mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:	1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	4.5 nC @ 4.5 V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	450 pF @ 6 V
FET Feature:	-
Power Dissipation (Max):	900mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	U-WLB1010-4
Package / Case:	4-UFBGA, WLBGA

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